Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

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Published: 30 June, 2020
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Description

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

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More Details

Type Book
ISBN13 9780367574369
ISBN10 0367574365
Number Of Pages 392
Item Weight 771 g
Publisher / Reseller Taylor & Francis Ltd
Format paperback
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Author's Bio

Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.

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